7EC4-IC TECHNOLOGY |
Units: I-INTRODUCTION TO TECHNOLOGIES |
Semiconductor Substrate-Crystal defects, Electronic
Grade Silicon, Czochralski Growth, Float Zone Growth, Characterization & evaluation of Crystals; Wafer
Preparation- Silicon Shaping, Etching and Polishing, Chemical cleaning.
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Units: II-DIFFUSION & ION IMPLANTATION |
Ficks diffusion Equation in One Dimension, Atomic
model, Analytic Solution of Ficks Law, correction to simple theory , Diffusion in SiO2. Ion Implantation and
Ion Implantation Systems Oxidation. Growth mechanism and Deal-Grove Model of oxidation, Linear and
Parabolic Rate co-efficient, Structure of SiO2, Oxidation techniques and system, Oxide properties. |
Units: III-CHEMICAL VAPOUR DEPOSITION AND LAYER GROWTH |
CVD for deposition of dielectric
and polysilicon – a simple CVD system, Chemical equilibrium and the law of mass action, Introduction to
atmospheric CVD of dielectric, low pressure CVD of dielectric and semiconductor. Epitaxy-Vapour Phase
Expitaxy, Defects in Epitaxial growth, Metal Organic Chemical Vapor Deposition, Molecular beam epitaxy.
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Units: IV-PATTERN TRANSFER |
Introduction to photo/optical lithography, Contact/ proximity printers,
Projection printers, Mask generation, photoresists. Wet etching, Plasma etching, Reaction ion etching.
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Units: V-VLSI PROCESS INTEGRATION |
Junction and Oxide Isolation, LOCOS methods, Trench
Isolation, SOI; Metallization, Planarization. Fundamental consideration for IC Processing, NMOS IC
Technology, CMOS IC Technology, Bipolar IC Technology.
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