5EE1-POWER ELECTRONICS-III |
Units: I-Power Semiconductor Devices: |
Characteristics of Power Transistor, Thyristor, GTO, Power
MOSFET and IGBT. Two-Transistor Model of Thyristor.
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Units: II-SCR: |
Construction and characteristics, specification and ratings, pulse transformer, optical
isolators, methods of turn on: R, RC, UJT relaxation oscillator, Rating extension by series and
parallel connections, string efficiency. Protection of SCR-Protection against over voltage, over
current, dv/dt, di/dt, Gate protection. |
Units: III-Converters-I: |
Single Phase half & full wave converters with RL load, Single phase dual
converters, Three phase half wave converters, Three phase full converters with RL load, Three
phase dual converters.
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Units: IV-Converters-II: |
Single and three-phase semi converters with RL load. Power Factor
Improvement-Extinction angle control, symmetrical angle control, pulse width modulation
control and sinusoidal pulse width modulation control. Inversion operation. Effect of load and
source impedances.
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Units: V-DC-DC Converters: Choppers: |
Step Up/Down Copper, Chopper Configurations, analysis of
type A Chopper Commutation of Choppers. Switched Mode Regulators-buck, boost, buckboost
and cuk regulator.
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