3EX4-ELECTRONIC DEVICES & CIRCUITS |
Units: I-SEMICONDUCTOR PHYSICS : |
Mobility and conductivity, charge densities in a
semiconductor, Fermi Dirac distribution, carrier concentrations and fermi levels in
semiconductor, Generation and recombination of charges, diffusion and continuity equation, Mass
action Law, Hall effect.
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Units: II |
Junction diodes, Diode as a circuit element, load line concept, clipping and clamping circuits,
Voltage multipliers. Construction, characteristics and working principles of UJT |
Units: III |
Transistor characteristics, Current components, Current gains: alpha and beta. Operating point.
Hybrid model, h-parameter equivalent circuits. CE, CB and CC configuration. DC and AC
analysis of CE, CC and CB amplifiers. Ebers-Moll model. Biasing & stabilization techniques.
Thermal runaway, Thermal stability.
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Units: IV |
JFET, MOSFET, Equivalent circuits and biasing of JFET's & MOSFET’s. Low frequency CS
and CD JFET amplifiers. FET as a voltage variable resistor.
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Units: V-SMALL SIGNAL AMPLIFIERS AT LOW FREQUENCY: |
Analysis of BJT and FET, DC
and RC coupled amplifiers. Frequency response, midband gain, gains at low and high
frequency. Analysis of DC and differential amplifiers, Miller's Theorem. Cascading Transistor
amplifiers, Darlington pair. Emitter follower, source follower.
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