3EC2-ELECTRONIC DEVICES & CIRCUITS |
Units: I-SEMICONDUCTOR PHYSICS : |
Mobility and conductivity, charge densities in a semiconductor,
Fermi Dirac distribution, carrier concentrations and fermi levels in semiconductor, Generation and
recombination of charges, diffusion and continuity equation, Mass action Law, Hall effect.
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Units: II |
Junction diodes, Diode as a ckt. element, load line concept, clipping and clamping circuits,
Voltage multipliers. Construction, characteristics and working principles of UJT |
Units: III |
Transistor characteristics, Current components, Current gains: alpha and beta. Operating
point. Hybrid model, h-parameter equivalent circuits. CE, CB and CC configuration. DC and AC analysis
of CE,CC and CB amplifiers. Ebers-Moll model. Biasing & stabilization techniques. Thermal runaway,
Thermal stability.
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Units: IV |
JFET, MOSFET, Equivalent circuits and biasing of JFET's & MOSFET’s. Low frequency CS and
CD JFET amplifiers. FET as a voltage variable resistor.
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Units: V-SMALL SIGNAL AMPLIFIERS AT LOW FREQUENCY : |
Analysis of BJT and FET, DC and
RC coupled amplifiers. Frequency response, midband gain, gains at low and high frequency. Analysis of
DC and differential amplifiers, Miller's Theorem. Cascading Transistor amplifiers, Darlington pair.
Emitter follower, source follower.
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