06EE766 - Vlsi Circuits and Design (2006 - 2007) |
PART – A |
UNIT – I A REVIEW OF MICROELECTRONIC 3 AND AN INTRODUCTION TO MOS TECHNOLOGY |
Introduction to integrated circuit technology,
Production of E-beam masks. Introduction, VLSI technologies, MOS
transistors, fabrication, thermal aspects, production of E-beam masks. |
UNIT – II BASIC ELECTRICAL PROPERTIES OF MOS AN BICMOS CIRCUIT |
Rain to source current Ids versus Vds relationships-BICMOS
latch up susceptibility. MOS transistor characteristics, figure of merit, pass
transistor NMOS and COMS inverters, circuit model, latch up. |
UNIT – III MOS AND BICMOS CIRCUIT DESIGN PROCESSES |
Mass layers,
strick diagrams, design, symbolic diagrams. |
UNIT - IV BASIC CIRCUIT CONCEPTS |
Sheet resistance, capacitance layer inverter
delays, wiring capacitance, choice of layers. |
PART – B |
UNIT – V SCALING OF MOS CIRCUITS |
Scaling model and scaling factors- Limit
due to current density. |
UNIT – VI SUBSYSTEM DESIGN AND LAYOUT |
Some architecture issues- other
systems considerations. Examples of structural design, clocked sequential
circuits. |
UNIT – VII SUBSYSTEM DESIGN PROCESSES |
Some general considerations, an
Illustration of design process, observations
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UNIT – VIII ILLUSTRATION OF THE DESIGN PROCESS |
Observation on the
design process, Regularity Design of an ALU subsystem. Design of 4-bit
adder, implementing ALU functions.
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REFERENCE |
TEXT BOOKS: |
1.“Basic VLSI Design” -3rd Edition, PHI
2. “Fundamentals of Modern VLSI Devices”-Yuan Taun Tak H
Ning Cambridge Press, South Asia Edition 2003.
3. “ModernVLSI Design Wayne wolf”, Pearson Education Inc. 3rd
edition”-Wayne wolf 2003.
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